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| Ordering number : ENN6681 3LP01S P-Channel Silicon MOSFET 3LP01S Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2192 [3LP01S] 0.75 0.6 0 to 0.1 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 3 0.8 1.6 0.2 1 2 0.4 0.5 0.5 1.6 0.4 0.1max 0.1 1 : Gate 2 : Source 3 : Drain Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions Ratings SANYO : SMCP Unit -30 10 --0.1 --0.4 0.15 150 V V A A W C C --55 to +150 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--100A VDS=-10V, ID=--50mA ID=--50mA, VGS=-4V ID=--30mA, VGS=-2.5V ID=--1mA, VGS=-1.5V Ratings min --30 --10 10 --0.4 80 110 8 11 27 10.4 15.4 54 --1.4 typ max Unit V A A V mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12201 TS IM TA-2005 No.6681-1/4 3LP01S Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-100mA VDS=--10V, VGS=--10V, ID=-100mA VDS=--10V, VGS=--10V, ID=-100mA IS=--100mA, VGS=0 Ratings min typ 7.5 5.7 1.8 24 55 120 130 1.43 0.18 0.25 --0.83 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Marking : XA Switching Time Test Circuit VIN VIN VDD= --15V ID= --50mA RL=300 0V --4V PW=10s D.C.1% D G VOUT 3LP01S P.G 50 S --0.10 --0.09 --0.08 ID -- VDS 0V --3.5V --0.20 --0.18 --0.16 ID -- VGS VDS= --10V --4 . --3 . 0V --2 .5 V C Drain Current, ID -- A Drain Current, ID -- A V --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 --0.01 0 0 --0.2 --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 0 VGS= --1.5V --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 75 C --2.5 --3.0 Ta= --25 --2.0V 25C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 30 IT00077 100 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT00078 RDS(on) -- ID Ta=25C 7 VGS= --4V Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- 25 5 3 2 20 15 10 7 5 3 2 Ta=75C 25C --50mA 10 ID= --30mA --25C 5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 1.0 --0.01 2 3 5 7 --0.1 2 3 Gate-to-Source Voltage, VGS -- V IT00079 Drain Current, ID -- A IT00080 No.6681-2/4 3LP01S 100 7 RDS(on) -- ID VGS= --2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- 1000 7 5 3 2 RDS(on) -- ID VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- 5 3 2 10 7 5 3 2 Ta=75C 25C --25C 100 7 5 3 2 Ta=75C --25C 2 3 5 7 --1.0 25C 1.0 --0.01 2 3 5 7 --0.1 2 3 10 --0.1 2 3 Drain Current, ID -- A 18 IT00081 1.0 RDS(on) -- Ta Drain Current, ID -- mA IT00082 yfs -- ID 16 14 12 10 8 6 4 2 --60 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V Static Drain-to-Source On-State Resistance, RDS(on) -- -I D= 30 , mA = -V GS 2.5 V 25C --50 I D= m A, 4.0 = -VGS V 0.1 7 5 3 2 2 Ta= -- 5C 75C --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 IT00083 1000 7 IF -- VSD VGS = 0 Switching Time, SW Time -- ns Drain Current, ID -- A IT00084 SW Time -- ID 5 3 2 VDD= --15V VGS= --4V Forward Current, IF -- A --0.1 7 5 tf td(off) 100 7 5 3 2 3 tr td(on) Ta=7 5 C 2 25C --0.01 --0.5 --25C --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 IT00085 10 --0.01 2 3 5 7 Diode Forward Voltage, VSD -- V 100 7 5 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Sourse Voltage, VGS -- V Drain Current, ID -- A --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A Ciss, Coss, Crss -- pF 3 2 10 7 5 3 2 Ciss Coss Crss 0 --5 --10 --15 --20 --25 --30 IT00087 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V Total Gate Charge, Qg -- nC IT00088 No.6681-3/4 3LP01S 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02381 Note on usage : Since the 3LP01S is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6681-4/4 |
Price & Availability of 3LP01S
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